dc.contributor.author |
AKTER, SURAIYA |
|
dc.date.accessioned |
2018-11-04T06:32:38Z |
|
dc.date.available |
2018-11-04T06:32:38Z |
|
dc.date.issued |
2016 |
|
dc.identifier.uri |
http://archive.saulibrary.edu.bd:8080/xmlui/handle/123456789/144 |
|
dc.description |
DEPARTMENT OF HORTICULTURE
SHER-E-BANGLA AGRICULTURAL UNIVERSITY
DHAKA-1207 |
en_US |
dc.description.abstract |
This field experiment was conducted at the Horticulture farm of Sher-e- Bangla Agricultural
University, Dhaka during the period of november 2015 to February 2016 to investigate the
effect of different levels of nitrogen and potassium on the growth and yield of French bean.
The experiment consisted of four levels of nitrogen viz.N
0
: control N
1
: 50 kg/ha, N
: 90
kg/ha, N
3
:130 Kg/ha and three levels of potassium, viz. K
0
: Control; K
:
90Kg/ha and BARIZhar sheem-1 was used as french bean variety. The experiment was laid
out in Randomized Complete Block Design with three replications. Nitrogen had significant
effect on the plant height, number of branch, leaf size, number of flower, number of pod per
plant and pod yield per hectare. However, incase of nitrogen the highest yield(13.28 t/ha) was
obtained from N
2
and lowest yield (10.41t/ha) was obtained from N
.For potassium the
highest yield (14.91 t/ha) was obtained from K
2
0
and lowest yield (10.78 t/ha) from K
.Among
all treatment combinations highest yield (18.04 t/ha) was obtained from N
and lowest
yield (9.61 t/ha) was obtained from N
0
K
. So, 90kg N/ha and 90 kg K/ha may be used for
french bean cultivation. |
en_US |
dc.description.sponsorship |
A Thesis
Submitted to the Faculty of Agriculture,
Sher-e-Bangla Agricultural University, Dhaka,
in partial fulfillment of the requirements
for the degree of
MASTER OF SCIENCE (MS)
IN
HORTICULTURE |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
DEPT. OF HORTICULTURE |
|
dc.subject |
FRENCH BEAN, NITROGEN AND POTASSIUM |
en_US |
dc.title |
GROWTH AND YIELD OF FRENCH BEAN AS INFLUENCED BY NITROGEN AND POTASSIUM |
en_US |
dc.type |
Thesis |
en_US |